4H-N 8 inch SiC Substrate Manufacturer

As a pioneering SiC ingot manufacturer, Homray Material Technology (HMT) now offers 8'' 4H-N Type SiC substrates in limited pilot quantities. While current industry production predominantly utilizes 4-inch and 6-inch wafers, the transition to 8-inch represents a critical cost-reduction milestone.

The usable surface area of an 8 inch wafer exceeds that of a 6 inch wafer by approximately 78% (ratio ≈1.78:1), translating to significantly lower die-per-wafer costs for end applications. Nevertheless, three key factors sustain the 6-inch mainstream:

1. Mature process ecosystems for 6-inch equipment

2. Higher crystal defect rates in larger-diameter ingots

3. Capital expenditure barriers for 8-inch retrofitting

HMT is advancing 8-inch crystal growth technology to accelerate this industry transition while maintaining full support for legacy 6-inch production. Contact us for pilot-scale access to next-gen substrates.

8 inch SiC Substrate Wafer                                         6 inch SiC Wafer
 

As we know, silicon wafers have started to move from 8 inches to 12 inches. Can silicon wafer production experience help SiC wafers develop to a larger area? Compared with silicon wafers, what are the difficulties in SiC wafer production?

Compared with silicon chips, the main differences between 8 inch and 6 inch SiC production are in high temperature processes such as high temperature ion implantation, high temperature oxidation, high temperature activation, and the hard mask processes required by these high temperature processes.

The manufacturing difficulties of 8 inch SiC substrate mainly focus on substrate growth, substrate cutting and oxidation process. In terms of substrate growth, the difficulty of substrate growth increases exponentially when the diameter is expanded to 8 inches. In the aspect of substrate cutting, the larger the size of substrate, the more significant the cutting stress and warping; Oxidation process has always been the core difficulty in silicon carbide process, 8 inches and 6 inches have different requirements for the control of air flow and temperature field, and the process needs to be independently developed.