Conductive 4H-N 6 Inch SiC Substrate Manufacturer

As a professional 6'' SiC wafer manufacturer, HMT supplies high-quality Dummy Grade and Production Grade silicon carbide substrates at highly competitive market prices. We offer both 4H-N Type (conductive) and 4H-HPSI Type (high-purity semi-insulating) SiC wafers with ultra-low Micropipe Density (MPD). Standard 6 inch SiC wafers feature 350μm thickness, with 500μm 800um options available. Our conductive N-type substrates are ideal for SiC epi wafers, power devices including SBDs and MOSFETs, and other semiconductor applications.


 

6 inch SiC Substate Basic Parameters

Semi-insulating SiC substrates are mainly used in gallium nitride rf devices.  By growing gan epitaxy layer on semi-insulating SiC substrate, SiC based GAN epitaxy sheet can be further made into GAN radio frequency device.  Microwave radio frequency components is the foundation of realize the signal sending and receiving components, is the core of the wireless communication, mainly including rf switch, LNA, power amplifier, filter and other devices, among them, the power amplifier is rf signal amplification device, directly determine the mobile terminal and base station of wireless communication distance, key parameters such as the signal quality.  

Conductive SiC substrate: refers to the resistivity of SiC substrate in 0.015-0.028ohm.cm.  SiC epitaxial wafers grown from conductive SiC substrates can be further made into power devices. Power devices are the core components of power electronics conversion devices, which are widely used in new energy vehicles, photovoltaic, smart power grids, rail transit and other fields.  Automotive electrification trend is favorable for SiC development.