
4Inch 4H-SiC Wafers Manufacturer Conductive & Semi-Insulating
Grade: D/R/P Grade
Type: 4H-N
Dimension: 4inch
Thickness:350±25um
Product Description
While the 4H-SiC substrate industry advances towards 8-inch and even 12-inch wafers, specialized applications still demand smaller formats like 2-inch and 4-inch. As a dedicated silicon carbide substrate manufacturer, we maintain specialized production lines for both 4-inch conductive-type and semi-insulating silicon carbide substrates.

Our Standard Specifications:
-
Conductive-Type: 350μm thickness | 0.015-0.028 Ω·cm resistivity
-
Semi-Insulating Type: 500μm thickness | ≥1E7 Ω·cm resistivity
We offer custom SiC wafer solutions tailored to your unique requirements. Leveraging our efficient global logistics network, we ensure the secure and timely delivery of your custom silicon carbide substrates worldwide.
Related Products

























