
4 inch P Grade SiC Wafer Manufacturer
Type: 4H-N
Dimension: 4 inch
Grade: D R P
Product Name: SiC Substrate
Product Description
As a leading global manufacturer and supplier of 8'' SiC wafers, Homray Material Technology (HMT) produces high-quality conductive N-type 4H-SiC wafers in 4-inch diameters. Our wafers are available in three precision grades (D-Grade, R-Grade, and P-Grade) to meet diverse application requirements.
Each wafer features advanced surface finishing: CMP-polished Si-face and polished C-face for optimal performance. While focusing on larger formats, we maintain dedicated 2-inch and 4-inch SiC wafer production capacity to support specialized customer needs.
If you require reliable, stable supply of legacy 2-inch or 4-inch SiC wafers, partner with HMT – your trusted solution for consistent quality across all diameters. Contact us today to secure your supply.
4 inch SiC Boules

4 inch SiC Raw Cut Wafer and Polished Wafer

Power devices are one of the most important basic components in power electronics industry, which are widely used in electric energy conversion and circuit control of power equipment. The SiC base gallium nitride (GAN-on-sic) epitaxial wafer grown on semi-insulated SiC substrate can be further made into microwave radio frequency devices. Microwave radio frequency devices are the basic components of signal sending and receiving and the core of wireless communication, mainly including radio frequency switches, LNA, power amplifiers, filters and other devices.
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